bcw66f / BCW66G / bcw66h 0.8a , 75v npn plastic encapsulated transistor elektronische bauelemente 02-jan-2013 rev. a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. 1 base 2 emitter collector 3 rohs compliant product a suffix of -c specifies halogen & lead-free features complementary to bcw68 marking part number marking code bcw66f ef BCW66G eg bcw66h eh package information absolute maximum ratings (t a =25 c unless otherwise specified) parameter symbol ratings unit collector to base voltage v cbo 75 v collector to emitter voltage v ceo 45 v emitter to base voltage v ebo 5 v collector current - continuous i c 800 ma collector power dissipation p c 200 mw junction, storage temperature t j , t stg 150, -55~150 c package mpq leader size sot-23 3k 7 inch ref. millimeter ref. millimeter min. max. min. max. a 2.80 3.04 g 0.09 0.18 b 2.10 2.55 h 0.45 0.60 c 1.20 1.40 j 0.08 0.177 d 0.89 1.15 k 0.6 ref. e 1.78 2.04 l 0.89 1.02 f 0.30 0.50 sot-23 top view a l c b d g h j f k e 1 2 3 1 2 3
bcw66f / BCW66G / bcw66h 0.8a , 75v npn plastic encapsulated transistor elektronische bauelemente 02-jan-2013 rev. a page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a =25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions collector to base breakdown voltage v (br)cbo 75 - - v i c =10 a, i e =0 collector to emitter breakdown voltage v (br)ceo 45 - - v i c =10ma, i b =0 emitter to base breakdown voltage v (br)ebo 5 - - v i e =10 a, i c =0 collector cut-off current i cbo - - 0.02 a v cb =45v, i e =0 emitter cut-off current i ebo - - 0.02 a v eb =4v, i c =0 dc current gain 1 bcw66f h fe (1) 35 - - v ce =10v, i c =0.1ma BCW66G 50 - - bcw66h 80 - - bcw66f h fe (2) 75 - - v ce =1v, i c =10ma BCW66G 110 - - bcw66h 180 - - bcw66f h fe (3) 100 - 250 v ce =1v, i c =100ma BCW66G 160 - 400 bcw66h 250 - 630 bcw66f h fe (4) 35 - - v ce =2v, i c =500ma BCW66G 60 - - bcw66h 100 - - collector to emitter saturation voltage v ce(sat) - - 0.3 v i c =100ma, i b =10ma - - 0.7 i c =500ma, i b =50ma base to emitter saturation voltage v be(sat) - - 2 v i c =500ma, i b =50ma transition frequency f t 100 - - mhz v ce =10v, i c =20ma, f=100mhz collector output capacitance c ob - - 12 pf v cb =10v, i e =0 , f=1mhz input capacitance c ib - - 80 pf v eb =0.5v, i e =0, f=1mhz noise figure nf - - 10 db v ce =5v, i c =0.2ma, f=1khz, r s =1k , bw=200hz note: 1. pulse test.
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